| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ARF220 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 2 |
ARF220S14 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 3 |
ARF221 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 4 |
ARF221S14 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 5 |
CZRF22VB |
Zener Diodes, PD=0.2Watts, VZ=22V |
Comchip Technology |
| 6 |
CZRF22VB-HF |
Halogen Free Zener Diodes, PD=0.2Watts, VZ=22V |
Comchip Technology |
| 7 |
ELJRF22NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 8 |
ELJRF22NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 9 |
HRF22 |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 10 |
IRF220 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 11 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 12 |
IRF220 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 13 |
IRF220 |
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 14 |
IRF220 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 15 |
IRF220-223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 16 |
IRF2204 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 17 |
IRF2204L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 18 |
IRF2204LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 19 |
IRF2204PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 20 |
IRF2204S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 21 |
IRF2204SPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 22 |
IRF221 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 23 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 24 |
IRF221 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 25 |
IRF221 |
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 26 |
IRF221 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 27 |
IRF222 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 28 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 29 |
IRF222 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 30 |
IRF222 |
Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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