No. |
Part Name |
Description |
Manufacturer |
1 |
IRF230 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
2 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
3 |
IRF230 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
4 |
IRF230 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
5 |
IRF230 |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
6 |
IRF230 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
7 |
IRF230 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET |
SemeLAB |
8 |
IRF230 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
9 |
IRF230-233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
10 |
IRF230N |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
11 |
MRF230 |
1.5V - 90MHz RF Power Transistor NPN Silicon |
Motorola |
12 |
MRF230 |
30 W |
New Jersey Semiconductor |
13 |
RF2301 |
HIGH ISOLATION BUFFER AMPLIFIER |
RF Micro Devices |
14 |
RF2301PCBA |
HIGH ISOLATION BUFFER AMPLIFIER |
RF Micro Devices |
15 |
RF2302 |
BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
16 |
RF2302PCBA-H |
BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
17 |
RF2302PCBA-L |
BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
18 |
RF2304 |
GENERAL PURPOSE LOW-NOISE AMPLIFIER |
RF Micro Devices |
19 |
RF2304PCBA |
GENERAL PURPOSE LOW-NOISE AMPLIFIER |
RF Micro Devices |
20 |
RF2306 |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
21 |
RF2306PCBA |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
22 |
RF2307 |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
23 |
RF2307PCBA |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
24 |
RF2308 |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
25 |
RF2308PCBA |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
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