| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF232 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 2 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 3 |
IRF232 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4 |
IRF232 |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
IRF232 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRF232R |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 7 |
MRF232 |
NPN silicon RF power transistor 12.5V 7.5W 90MHz |
Motorola |
| 8 |
RF2320 |
LINEAR GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 9 |
RF2320PCBA |
LINEAR GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 10 |
RF2321 |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 11 |
RF2321PCBA |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 12 |
RF2322 |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 13 |
RF2322PCBA |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 14 |
RF2323 |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 15 |
RF2323PCBA |
3V general purpose amplifier |
RF Micro Devices |
| 16 |
RF2324 |
PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER |
RF Micro Devices |
| 17 |
RF2324PCBA |
PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER |
RF Micro Devices |
| 18 |
RF2325 |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 19 |
RF2325PCBA |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 20 |
RF2326 |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 21 |
RF2326PCBA |
3V GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| | | |
