| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ARF240 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 2 |
ARF240S25 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 3 |
ARF241 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 4 |
ARF241S25 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 5 |
BAL-NRF01D3 |
50Ω nominal input / conjugate match balun to nRF24LE1 & nRF51822-QFAA, with integrated harmonic filter |
ST Microelectronics |
| 6 |
CZRF24VB |
Zener Diodes, PD=0.2Watts, VZ=24V |
Comchip Technology |
| 7 |
CZRF24VB-HF |
Halogen Free Zener Diodes, PD=0.2Watts, VZ=24V |
Comchip Technology |
| 8 |
ELJRF24NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 9 |
ELJRF24NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 10 |
HD6417750RF240 |
1.5V; 240MHz; 32-bit RISC microprocessor |
Hitachi Semiconductor |
| 11 |
IRF240 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 12 |
IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 13 |
IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
| 14 |
IRF240 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 15 |
IRF240 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 16 |
IRF240 |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
SemeLAB |
| 17 |
IRF240 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A |
Siliconix |
| 18 |
IRF240-243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 19 |
IRF240SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
| 20 |
IRF241 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 21 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 22 |
IRF241 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
| 23 |
IRF241 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 24 |
IRF241 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
| 25 |
IRF242 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 26 |
IRF242 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
| 27 |
IRF242 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 28 |
IRF242 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
| 29 |
IRF243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 30 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
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