| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ARF241 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 2 |
ARF241S25 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 3 |
IRF241 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 4 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 5 |
IRF241 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
| 6 |
IRF241 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 7 |
IRF241 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
| 8 |
RF2411 |
LOW NOISE AMPLIFIER/MIXER |
RF Micro Devices |
| 9 |
RF2411PCBA-H |
LOW NOISE AMPLIFIER/MIXER |
RF Micro Devices |
| 10 |
RF2411PCBA-L |
LOW NOISE AMPLIFIER/MIXER |
RF Micro Devices |
| 11 |
RF2413 |
GAIN CONTROLLED DUAL-CONVERSION QUADRATURE MODULATOR |
RF Micro Devices |
| 12 |
RF2413PCBA |
GAIN CONTROLLED DUAL-CONVERSION QUADRATURE MODULATOR |
RF Micro Devices |
| 13 |
RF2416 |
DUAL-BAND 2.7V LOW NOISE AMPLIFIER |
RF Micro Devices |
| 14 |
RF2416PCBA |
DUAL-BAND 2.7V LOW NOISE AMPLIFIER |
RF Micro Devices |
| 15 |
RF2417 |
Tri-Band Low Noise Amplifier |
RF Micro Devices |
| 16 |
RF2418 |
LOW CURRENT LNA/MIXER |
RF Micro Devices |
| 17 |
RF2418PCBA |
LOW CURRENT LNA/MIXER |
RF Micro Devices |
| | | |
