| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AT88RF256-12 |
125 kHz RFID Chip for Cards and Tags |
Atmel |
| 2 |
FRF250D |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 3 |
FRF250H |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 4 |
FRF250R |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 5 |
FRF254D |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 6 |
FRF254H |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 7 |
FRF254R |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 8 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 9 |
IRF250 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 10 |
IRF250 |
30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET |
Intersil |
| 11 |
IRF250 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12 |
IRF250 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13 |
IRF250 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 14 |
IRF250CF |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 15 |
IRF250FI |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 16 |
IRF250R |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 17 |
IRF250SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
| 18 |
IRF251 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 19 |
IRF251 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
| 20 |
IRF251 |
Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 21 |
IRF251 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 22 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 23 |
IRF252 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
| 24 |
IRF252 |
Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 25 |
IRF252 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 26 |
IRF252R |
Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 27 |
IRF253 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 28 |
IRF253 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
| 29 |
IRF253 |
Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 30 |
IRF253 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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