| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF321 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 2 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 3 |
IRF321 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4 |
IRF321 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
IRF321 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
MRF321 |
10 W, 400 MHz, RF power transistor NPN silicon |
MA-Com |
| 7 |
MRF321 |
RF POWER TRANSISTOR NPN SILICON |
Motorola |
| 8 |
MRF321 |
Trans GP BJT NPN 33V 1.5A 4-Pin Case 244-04 |
New Jersey Semiconductor |
| 9 |
MRF321 |
RF POWER TRANSISTOR NPN SILICON |
Tyco Electronics |
| | | |
