| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 2 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3 |
IRF333 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 4 |
IRF333 |
Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
IRF333 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRF333 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
| 7 |
RF3330 |
IF GAIN CONTROLLED AMPLIFIER |
RF Micro Devices |
| 8 |
RF3330PCBA |
IF GAIN CONTROLLED AMPLIFIER |
RF Micro Devices |
| 9 |
RF3334 |
Forward Data Channel Tuner |
RF Micro Devices |
| | | |
