| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN-758 |
Application Note - A TWO-STAGE 1kW solid-state linear amplifier - 50W and 300W linear amplifiers for the 1.6 to 30MHz, MRF427 and MRF428 |
Motorola |
| 2 |
AN-758 |
Application Note - A TWO-STAGE 1kW solid-state linear amplifier - 50W and 300W linear amplifiers for the 1.6 to 30MHz, MRF427 and MRF428 |
Motorola |
| 3 |
AN-762 |
Application Note - Linear amplifiers for mobile operation, MRF453, MRF460, MRF455, MRF454, MRF458, MRF421 |
Motorola |
| 4 |
ARF422 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 5 |
ARF422S16 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6 |
ASIMRF427 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 7 |
EB27A |
Application Note - Get 300 Watts PEP linear across 2 to 30 MHz from this PUSH-PULL amplifier, MRF422 |
Motorola |
| 8 |
IRF420 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 9 |
IRF420 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 10 |
IRF420 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 11 |
IRF420 |
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 12 |
IRF420 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13 |
IRF420-423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 14 |
IRF421 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 15 |
IRF421 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 16 |
IRF421 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 17 |
IRF421 |
Trans MOSFET N-CH 450V 2.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 18 |
IRF421 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 19 |
IRF422 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 20 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 21 |
IRF422 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 22 |
IRF422 |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 23 |
IRF422 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 24 |
IRF422R |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 25 |
IRF423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 26 |
IRF423 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 27 |
IRF423 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 28 |
IRF423 |
Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 29 |
IRF423 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 30 |
MRF421 |
100 W, 30 MHz, RF power transistor NPN silicon |
MA-Com |
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