No. |
Part Name |
Description |
Manufacturer |
1 |
ARF422 |
FAST RECOVERY DIODE |
POSEICO SPA |
2 |
ARF422S16 |
FAST RECOVERY DIODE |
POSEICO SPA |
3 |
EB27A |
Application Note - Get 300 Watts PEP linear across 2 to 30 MHz from this PUSH-PULL amplifier, MRF422 |
Motorola |
4 |
IRF422 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
5 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
6 |
IRF422 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
7 |
IRF422 |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
8 |
IRF422 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
9 |
IRF422R |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
10 |
MRF422 |
150 W, 30 MHz, RF power transistor NPN silicon |
MA-Com |
11 |
MRF422 |
Application Note - Get 300 Watts PEP linear across 2 to 30MHz from this Push-Pull amplifier |
Motorola |
12 |
MRF422 |
RF POWER TRANSISTORS NPN SILICON |
Motorola |
13 |
MRF422 |
The RF Line NPN Silicon RF Power Transistor |
Tyco Electronics |
14 |
MRF422MP |
NPN Silicon RF Power Transistor 150W(PEP)-30MHz |
Motorola |
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