| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ARF435 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 2 |
ARF435S26 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 3 |
ELJRF43NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 4 |
ELJRF43NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 5 |
IRF430 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 6 |
IRF430 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 7 |
IRF430 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 8 |
IRF430 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 9 |
IRF430 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 10 |
IRF430 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11 |
IRF430 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 12 |
IRF430-433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 13 |
IRF430R |
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 14 |
IRF431 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 15 |
IRF431 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 16 |
IRF431 |
4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs |
Intersil |
| 17 |
IRF431 |
Trans MOSFET N-CH 450V 4.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 18 |
IRF431 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 19 |
IRF432 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 20 |
IRF432 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 21 |
IRF432 |
4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs |
Intersil |
| 22 |
IRF432 |
HEXFET POWER MOSFETS |
New Jersey Semiconductor |
| 23 |
IRF432 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 24 |
IRF433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 25 |
IRF433 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 26 |
IRF433 |
4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs |
Intersil |
| 27 |
IRF433 |
Trans MOSFET N-CH 450V 4A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 28 |
IRF433 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 29 |
MRF430 |
THE RF LINE NPN SILICON RF POWER TRANSISTOR |
Motorola |
| 30 |
MRF433 |
NPN Silicon RF Power Transistor 12.5W (PEP) - 30MHz |
Motorola |
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