| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADC32RF45 |
Dual Channel 14-bit 3.0 GSPS Analog to Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 2 |
ADC32RF45IRMP |
Dual Channel 14-bit 3.0 GSPS Analog to Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 3 |
ADC32RF45IRMPT |
Dual Channel 14-bit 3.0 GSPS Analog to Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 4 |
AN-762 |
Application Note - Linear amplifiers for mobile operation, MRF453, MRF460, MRF455, MRF454, MRF458, MRF421 |
Motorola |
| 5 |
AN-762 |
Application Note - Linear amplifiers for mobile operation, MRF453, MRF460, MRF455, MRF454, MRF458, MRF421 |
Motorola |
| 6 |
AN-762 |
Application Note - Linear amplifiers for mobile operation, MRF453, MRF460, MRF455, MRF454, MRF458, MRF421 |
Motorola |
| 7 |
AN-762 |
Application Note - Linear amplifiers for mobile operation, MRF453, MRF460, MRF455, MRF454, MRF458, MRF421 |
Motorola |
| 8 |
ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz |
Advanced Power Technology |
| 9 |
FRF450D |
9A/ 500V/ 0.615 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 10 |
FRF450H |
9A/ 500V/ 0.615 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 11 |
FRF450R |
9A/ 500V/ 0.615 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 12 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Fairchild Semiconductor |
| 13 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 14 |
IRF450 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 15 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Intersil |
| 16 |
IRF450 |
N Channel MOSFET |
Microsemi |
| 17 |
IRF450 |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 18 |
IRF450 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 19 |
IRF450 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 20 |
IRF450R |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 21 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 22 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 23 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 24 |
IRF451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 25 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 26 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 27 |
IRF452 |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 28 |
IRF452 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 29 |
IRF452R |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 30 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
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