No. |
Part Name |
Description |
Manufacturer |
1 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
2 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
3 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
4 |
IRF451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
5 |
MCRF451 |
|
Microchip |
6 |
MCRF451X_SN |
13.56 MHz read/write passive RFID device |
Microchip |
7 |
MCRF451_P |
13.56 MHz read/write passive RFID device |
Microchip |
8 |
MCRF451_S |
13.56 MHz read/write passive RFID device |
Microchip |
9 |
MCRF451_SB |
13.56 MHz read/write passive RFID device |
Microchip |
10 |
MCRF451_W |
13.56 MHz read/write passive RFID device |
Microchip |
11 |
MCRF451_WB |
13.56 MHz read/write passive RFID device |
Microchip |
12 |
MCRF451_WF |
13.56 MHz read/write passive RFID device |
Microchip |
13 |
MCRF451_WFB |
13.56 MHz read/write passive RFID device |
Microchip |
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