| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BAL-NRF01D3 |
50Ω nominal input / conjugate match balun to nRF24LE1 & nRF51822-QFAA, with integrated harmonic filter |
ST Microelectronics |
| 2 |
BAL-NRF02D3 |
50Ω nominal input / conjugate match balun to nRF51822-CEAA, with integrated harmonic filter |
ST Microelectronics |
| 3 |
BALF-NRF01D3 |
50 Ω nominal input / conjugate match balun to nRF51822-QFAAG0,\rnRF51822-QFAB0, nRF51422-QFAAE0 / integrated harmonic filter |
ST Microelectronics |
| 4 |
BALF-NRF01D3 |
50 Ω nominal input / conjugate match balun to nRF51822-QFAAG0,\rnRF51822-QFAB0, nRF51422-QFAAE0 / integrated harmonic filter |
ST Microelectronics |
| 5 |
BALF-NRF01D3 |
50 Ω nominal input / conjugate match balun to nRF51822-QFAAG0,\rnRF51822-QFAB0, nRF51422-QFAAE0 / integrated harmonic filter |
ST Microelectronics |
| 6 |
BRF510 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 7 |
ELJRF51NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 8 |
ELJRF51NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 9 |
IRF510 |
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 10 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 11 |
IRF510 |
N-channel power MOSFET, 100V, 5.6A |
Harris Semiconductor |
| 12 |
IRF510 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13 |
IRF510 |
5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET |
Intersil |
| 14 |
IRF510 |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 15 |
IRF510 |
N-Channel Power MOSFET |
Samsung Electronic |
| 16 |
IRF510 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A |
Siliconix |
| 17 |
IRF510 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 18 |
IRF510-513 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 19 |
IRF510A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 20 |
IRF510F |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 21 |
IRF510G |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 22 |
IRF510S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 23 |
IRF510STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 24 |
IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 25 |
IRF511 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 26 |
IRF511 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 27 |
IRF511 |
N-channel power MOSFET, 80V, 5.6A |
Harris Semiconductor |
| 28 |
IRF511 |
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 29 |
IRF511 |
N-Channel Power MOSFET |
Samsung Electronic |
| 30 |
IRF511 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A |
Siliconix |
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