| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF511 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 2 |
IRF511 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 3 |
IRF511 |
N-channel power MOSFET, 80V, 5.6A |
Harris Semiconductor |
| 4 |
IRF511 |
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 5 |
IRF511 |
N-Channel Power MOSFET |
Samsung Electronic |
| 6 |
IRF511 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A |
Siliconix |
| 7 |
IRF511 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 8 |
MRF511 |
NPN silicon high frequency transistor |
Motorola |
| 9 |
RF5110G |
150 - 960 MHz, 3 Volt General Purpose / Power Amplifier |
Qorvo |
| 10 |
RF5112 |
2.4 GHz 802.11b/g/n Wi-Fi / ISM Linear Power Amplifier |
Qorvo |
| 11 |
RF5117 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER |
RF Micro Devices |
| 12 |
RF5117PCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER |
RF Micro Devices |
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