| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF532 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 2 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 3 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 4 |
IRF532 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 5 |
IRF532 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRF532 |
N-channel MOSFET, 100V, 12A |
SGS Thomson Microelectronics |
| 7 |
IRF532 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
| 8 |
IRF532F1 |
N-channel MOSFET, 100V, 8A |
SGS Thomson Microelectronics |
| 9 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 10 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 11 |
MRF532 |
High Frequency transistor PNP silicon |
Motorola |
| 12 |
RF5325 |
2.4 GHz 802.11b/g/n Wi-Fi / ISM Front End Module |
Qorvo |
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