No. |
Part Name |
Description |
Manufacturer |
1 |
IRF5810 |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
2 |
IRF5810TR |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
3 |
IRF5810TRPBF |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
4 |
MRF581 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
5 |
MRF581 |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
6 |
MRF581 |
Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
7 |
MRF5811LT1 |
LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON |
Motorola |
8 |
MRF5811MLT1 |
Bipolar Transistor |
New Jersey Semiconductor |
9 |
MRF5812 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
10 |
MRF5812 |
Surface Mounted NPN Silicon RF Low Power Transistor |
Motorola |
11 |
MRF5812 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
New Jersey Semiconductor |
12 |
MRF5812MR1 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
New Jersey Semiconductor |
13 |
MRF5812MR2 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
New Jersey Semiconductor |
14 |
MRF5812R1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
15 |
MRF5812R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
16 |
MRF581A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
17 |
MRF581A |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
18 |
MRF581A |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
19 |
MRF581AG |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
20 |
MRF581M |
Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
21 |
PB-IRF5810 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
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