| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADS54RF63 |
12-bit, 550 MSPS ADC with Buffered Input and RF Input Sampling Ability |
Texas Instruments |
| 2 |
ADS54RF63IPFP |
12-bit, 550 MSPS ADC with Buffered Input and RF Input Sampling Ability 80-HTQFP -40 to 85 |
Texas Instruments |
| 3 |
ADS54RF63IPFPR |
12-bit, 550 MSPS ADC with Buffered Input and RF Input Sampling Ability 80-HTQFP -40 to 85 |
Texas Instruments |
| 4 |
BRF63000 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 5 |
BRF63002 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 6 |
BRF63002J |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 7 |
BRF63004 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 8 |
BRF63014 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 9 |
BRF63035 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 10 |
BRF63085 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 11 |
BRF63086 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 12 |
BRF63087 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 13 |
BRF63092 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 14 |
HIRF630 |
N-Channel MOSFETs |
Hi-Sincerity Microelectronics |
| 15 |
IRF630 |
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 16 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 17 |
IRF630 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 18 |
IRF630 |
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 19 |
IRF630 |
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 Tube |
New Jersey Semiconductor |
| 20 |
IRF630 |
N-channel TrenchMOS(tm) transistor |
Philips |
| 21 |
IRF630 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 22 |
IRF630 |
N - CHANNEL 200V - 0.35W - 9A - TO-220/FP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 23 |
IRF630 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 24 |
IRF630-006 |
Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 25 |
IRF630A |
Advanced Power MOSFET |
Fairchild Semiconductor |
| 26 |
IRF630A |
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 27 |
IRF630B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 28 |
IRF630B |
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 29 |
IRF630BTSTU_FP001 |
200V N-Channel B-FET / Substitute of IRF630 & IRF630A |
Fairchild Semiconductor |
| 30 |
IRF630BTSTU_FP001 |
200V N-Channel B-FET / Substitute of IRF630 & IRF630A |
Fairchild Semiconductor |
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