| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF722 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 2 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3 |
IRF722 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 4 |
IRF722 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 5 |
IRF722 |
N-Channel Power MOSFET |
Samsung Electronic |
| 6 |
IRF722 |
N-channel MOSFET, 400V, 2.8A |
SGS Thomson Microelectronics |
| 7 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 8 |
IRF7220 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 9 |
IRF7220PBF |
HEXFET Power MOSFET |
International Rectifier |
| 10 |
IRF7220TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 11 |
IRF7220TRPBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 12 |
IRF722F1 |
N-channel MOSFET, 400V, 2A |
SGS Thomson Microelectronics |
| 13 |
PB-IRF7220 |
Leaded -12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| | | |
