| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ELJRF82NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 2 |
ELJRF82NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 3 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 4 |
IRF820 |
POWER MOSFET |
BayLinear |
| 5 |
IRF820 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 6 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 7 |
IRF820 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 8 |
IRF820 |
2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 9 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 10 |
IRF820 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11 |
IRF820 |
N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 12 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| 13 |
IRF820 |
N-CHANNEL 500V - 2.5 OHM - 4A - TO-220 POWERMESH II MOSFET |
ST Microelectronics |
| 14 |
IRF820A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 15 |
IRF820AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 16 |
IRF820APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 17 |
IRF820AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 18 |
IRF820ASTRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 19 |
IRF820ASTRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 20 |
IRF820B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
| 21 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 22 |
IRF820PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 23 |
IRF820S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 24 |
IRF820STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 25 |
IRF820STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 26 |
IRF821 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 27 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 28 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 29 |
IRF821 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 30 |
IRF821 |
N-channel MOSFET, 450V, 2.5A |
SGS Thomson Microelectronics |
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