| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GTRFG0105 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 2 |
GTRFG0116 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 3 |
GTRFG2105 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 4 |
GTRFG761 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 5 |
GTRFG843 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 6 |
IRFG110 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 7 |
IRFG110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 8 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 9 |
IRFG5110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 10 |
IRFG5110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 11 |
IRFG5210 |
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 12 |
IRFG5210(N) |
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 13 |
IRFG5210(P) |
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 14 |
IRFG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 15 |
IRFG6110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 16 |
IRFG6110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 17 |
IRFG9110 |
100V Quad P-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 18 |
IRFG9110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 19 |
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT |
Motorola |
| 20 |
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT |
Motorola |
| 21 |
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 22 |
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 23 |
MRFG35005MT1 |
MRFG35005MT1 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 24 |
MRFG35005MT1 |
MRFG35005MT1 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 25 |
MRFG35005NT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
Freescale (Motorola) |
| 26 |
MRFG35010 |
MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 27 |
MRFG35010 |
MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 28 |
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 29 |
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 30 |
RFG30P05 |
30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs |
Intersil |
| | | |
