| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GTRFS191 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 2 |
GTRFS192 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 3 |
GTRFS193 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 4 |
GTRFS194 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 5 |
GTRFS195 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 6 |
IRFS11N50A |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 7 |
IRFS11N50ATRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 8 |
IRFS11N50ATRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 9 |
IRFS140A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 10 |
IRFS150A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 11 |
IRFS17N20D |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12 |
IRFS17N20DTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13 |
IRFS17N20DTRLP |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14 |
IRFS17N20DTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 15 |
PB-IRFS17N20D |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 16 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 17 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 18 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 19 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| | | |
