No. |
Part Name |
Description |
Manufacturer |
1 |
10RIF100W |
V(rrm): 1000V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
2 |
10RIF120W |
V(rrm): 1200V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
3 |
16RIF100W |
V(rrm): 1000V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
4 |
16RIF120W |
V(rrm): 1200V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
5 |
20RIF100W |
V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
6 |
20RIF120W |
V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
7 |
2N3954 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
8 |
2N3954A |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
9 |
2N3955 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
10 |
2N3956 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
11 |
2N3958 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
12 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
13 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
14 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
15 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
16 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
17 |
2SA100 |
Ge PNP Drift |
Unknow |
18 |
2SA101 |
Ge PNP Drift |
Unknow |
19 |
2SA102 |
Ge PNP Drift |
Unknow |
20 |
2SA103 |
Ge PNP Drift |
Unknow |
21 |
2SA104 |
Ge PNP Drift |
Unknow |
22 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
23 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
24 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
25 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
26 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
27 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
28 |
3500E |
Ultra-Low Drift Low Bias Current Operational Amplifier |
Burr Brown |
29 |
3510 |
Very Low Drift - Precision Operational Amplifier |
Burr Brown |
30 |
3510AM |
Very Low Drift - Precision Operational Amplifier |
Burr Brown |
| | | |