| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3831 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 2 |
1N3832 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 3 |
1N3833 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 4 |
1N3834 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 5 |
1N3835 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 6 |
1N3836 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 7 |
1N3837 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 8 |
1N3838 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 9 |
1N3839 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 10 |
1N3840 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 11 |
1N3841 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 12 |
1N3842 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 13 |
1N3843 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 14 |
1N3844 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 15 |
1N3845 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 16 |
1N3846 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 17 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 18 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 19 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 20 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 21 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 22 |
CROSS REFERENCE |
Cross Reference from MOTOROLA THYRISTOR DEVICE DATA 1993 |
Motorola |
| 23 |
CT-32 |
Leaded Thyristor DIAC |
Central Semiconductor |
| 24 |
NTE6415 |
Bidirectional Thyristor Diodes (SIDAC) |
NTE Electronics |
| 25 |
NTE6416 |
Bidirectional thyristor diode (SIDAC). Peak off voltage 45V. |
NTE Electronics |
| 26 |
NTE6417 |
Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. |
NTE Electronics |
| 27 |
NTE6418 |
Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. |
NTE Electronics |
| 28 |
NTE6419 |
Bidirectional Thyristor Diodes (SIDAC) |
NTE Electronics |
| | | |
