No. |
Part Name |
Description |
Manufacturer |
1 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
2 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
3 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
4 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
5 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
6 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
7 |
RK7002 |
Transistors > MOS FET > Small Signal MOS FET |
ROHM |
8 |
RK7002A |
Transistors > MOS FET > Small Signal MOS FET |
ROHM |
9 |
RK7002BM |
2.5V Drive Nch MOSFET |
ROHM |
10 |
RK7002BMHZG |
Nch 60V 250mA Small Signal MOSFET |
ROHM |
11 |
RK7002BMHZGT116 |
Nch 60V 250mA Small Signal MOSFET |
ROHM |
12 |
RK7002BMT116 |
2.5V Drive Nch MOSFET |
ROHM |
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