| No. |
Part Name |
Description |
Manufacturer |
| 1 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2 |
RM20TPM-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3 |
RM20TPM-24 |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
| 4 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5 |
RM20TPM-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 6 |
RM20TPM-2H |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
| 7 |
RM20TPM-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 8 |
RM20TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 9 |
RM20TPM-H |
Three-Phase Diode Bridge Modules (40 Amperes/800 Volts) |
Powerex Power Semiconductors |
| 10 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 11 |
RM20TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| | | |
