| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10RM60 |
High Voltage silicon rectifier 6kV |
SESCOSEM |
| 2 |
1RM60 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 3 |
20RM60 |
High Voltage silicon rectifier 6kV |
SESCOSEM |
| 4 |
6RM60 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 5 |
ARM60 |
Low power, general purpose 32-bit RISC microprocessor |
Zarlink Semiconductor |
| 6 |
ARM610 |
General purpose 32-bit microprocessor |
Zarlink Semiconductor |
| 7 |
M41T82RM6F |
Serial I2C bus real-time clock (RTC) with battery switch-over |
ST Microelectronics |
| 8 |
RM600DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9 |
RM600DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 10 |
RM60CZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 11 |
RM60CZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12 |
RM60CZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 13 |
RM60CZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 14 |
RM60CZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 15 |
RM60CZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 16 |
RM60DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 17 |
RM60DZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 18 |
RM60DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 19 |
RM60DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 20 |
RM60DZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 21 |
RM60DZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 22 |
RM60SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 23 |
RM60SZ-6S |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 24 |
RM60SZ-6S/-6R |
Fast Recovery Diode Modules, F Series (for welding) |
Mitsubishi Electric Corporation |
| 25 |
RM6172AMJRQML |
Dual High Speed, Low Power, Low Distortion Voltage Feedback Amplifiers |
National Semiconductor |
| 26 |
RN41-I/RM615 |
Bluetooth Module |
Microchip |
| 27 |
RN41-I/RM630 |
Bluetooth Module |
Microchip |
| 28 |
RN41N-I/RM615 |
Bluetooth Module |
Microchip |
| 29 |
RN42-I/RM615 |
Bluetooth Module |
Microchip |
| 30 |
RN42-I/RM630 |
Bluetooth Module |
Microchip |
| | | |
