No. |
Part Name |
Description |
Manufacturer |
1 |
16197A |
16197A Bottom Electrode SMD Test Fixture |
Agilent (Hewlett-Packard) |
2 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
3 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
4 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
5 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
6 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
7 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
8 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
9 |
40665 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
10 |
40666 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
11 |
AD549SH_883B |
18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurement |
Analog Devices |
12 |
AD7147 |
CapTouch™ Programmable Controller for Single-Electrode Capacitance Sensors |
Analog Devices |
13 |
AD7147A |
CapTouch® Programmable Controller for Single-Electrode Capacitance Sensors |
Analog Devices |
14 |
AD7148 |
CapTouch™ Programmable Controller for Single-Electrode Capacitance Sensors |
Analog Devices |
15 |
ADAS1000 |
Low Power, 5-Electrode Electrocardiogram (ECG) Analog Front End with respiration measurement and pace detection) |
Analog Devices |
16 |
ADAS1000-1 |
Low Power 5 electrode ECG Analog Front End |
Analog Devices |
17 |
ADAS1000-2 |
Low Power 5 electrode ECG Analog Front End Companion Chip |
Analog Devices |
18 |
ADAS1000-3 |
Low Power, 3-Electrode Electrocardiogram (ECG) Analog Front End |
Analog Devices |
19 |
ADAS1000-4 |
Low Power, 3-Electrode Electrocardiogram (ECG) Analog Front End with respiration measurement and pace detection |
Analog Devices |
20 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
21 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
22 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
23 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
24 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
25 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
26 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
27 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
28 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
29 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
30 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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