No. |
Part Name |
Description |
Manufacturer |
1 |
1N315DM |
Schottky barrier matched pairs diode |
mble |
2 |
1N5817-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=1A |
Comchip Technology |
3 |
1N5818-G |
Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=1A |
Comchip Technology |
4 |
1N5819-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
5 |
1N5820-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=3A |
Comchip Technology |
6 |
1N5821-G |
Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=3A |
Comchip Technology |
7 |
1N5822-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=3A |
Comchip Technology |
8 |
2-BAW95DM |
Schottky barrier matched pairs diode |
mble |
9 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
10 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
11 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
12 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
13 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
14 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
15 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
16 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
17 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
18 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
19 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
20 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
21 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
22 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
23 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
24 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
25 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
26 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
27 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
28 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
29 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
30 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| | | |