| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK1109 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 2 |
2SK4027 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 3 |
2SK4028 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 4 |
2SK660 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 5 |
74HC05 |
HEX INVERTER OPEN DRAIN |
ST Microelectronics |
| 6 |
74V1G05C |
SINGLE INVERTER OPEN DRAIN |
ST Microelectronics |
| 7 |
74V1G05S |
SINGLE INVERTER OPEN DRAIN |
ST Microelectronics |
| 8 |
74V1T05C |
SINGLE INVERTER OPEN DRAIN |
ST Microelectronics |
| 9 |
74V1T05S |
SINGLE INVERTER OPEN DRAIN |
ST Microelectronics |
| 10 |
74VHC05T |
HEX INVERTER OPEN DRAIN |
ST Microelectronics |
| 11 |
AAT1145IDE-0.6-T1 |
1.5A Step-Down Converter Output Voltage Adj. 0.6V to Vin |
Skyworks Solutions |
| 12 |
AAT1145IDE-1.8-T1 |
1.5A Step-Down Converter Output Voltage Fixed 1.8V |
Skyworks Solutions |
| 13 |
AN-53 |
Implementing an RC5051 DC-DC Converter on Pentium II Motherboards |
Fairchild Semiconductor |
| 14 |
AND8067 |
NL27WZ04 Dual Gate Inverter Oscillator Increases the Brightness of LEDs While Reducing Power Consumption |
ON Semiconductor |
| 15 |
H112 |
Hex inverter open collector output |
SGS-ATES |
| 16 |
H115 |
Strobed hex inverter open collector output |
SGS-ATES |
| 17 |
LM2614 |
400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers |
National Semiconductor |
| 18 |
LM2614ATL |
400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers |
National Semiconductor |
| 19 |
LM2614ATLX |
400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers |
National Semiconductor |
| 20 |
LM2614BTL |
400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers |
National Semiconductor |
| 21 |
LM2614BTLX |
400mA Sub-Miniature Adjustable DC-DC Converter Optimized for RF Power Amplifiers |
National Semiconductor |
| 22 |
M34D32 |
64/32 Kbit Serial IC Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
SGS Thomson Microelectronics |
| 23 |
M34D32 |
64/32 Kbit Serial IC Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 24 |
M34D32BN |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 25 |
M34D32BNT1 |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 26 |
M34D32BNT5 |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 27 |
M34D32BNT6 |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 28 |
M34D32MN |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 29 |
M34D32MNT1 |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| 30 |
M34D32MNT5 |
64/32 Kbit Serial I��C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
ST Microelectronics |
| | | |
