| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0105-100 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 2 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
| 3 |
0105-50 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 4 |
0204-125 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 5 |
0405-500L |
CW Class C ≤ 1 Ghz |
Microsemi |
| 6 |
1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 7 |
1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 8 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 9 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 10 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 11 |
1011-175 |
High power Class C transistor |
SGS Thomson Microelectronics |
| 12 |
1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 13 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 14 |
1132-5 |
450-512MHz CLASS C 12.5V 0.6W NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 15 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 16 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 17 |
1618-35 |
CW Class C > 1 GHz |
Microsemi |
| 18 |
1718-32L |
CW Class C > 1 GHz |
Microsemi |
| 19 |
1719-20 |
CW Class C > 1 GHz |
Microsemi |
| 20 |
1719-35 |
CW Class C > 1 GHz |
Microsemi |
| 21 |
1819-35 |
CW Class C > 1 GHz |
Microsemi |
| 22 |
1N5157 |
Silicon planar epitaxial varactor diode for use in multipliers C up to X band |
Mullard |
| 23 |
2001 |
CW Class C > 1 GHz |
Microsemi |
| 24 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 25 |
2003 |
CW Class C > 1 GHz |
Microsemi |
| 26 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 27 |
2005 |
CW Class C > 1 GHz |
Microsemi |
| 28 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 29 |
2010 |
CW Class C > 1 GHz |
Microsemi |
| 30 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
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