| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0662.400HXLL |
LT-5 tm fast-acting fuse. Long lead (bulk) 100 pieces. Ampere rating .400, voltage rating 250, nominal resistance cold ohms 180. |
Littelfuse |
| 2 |
0662.400HXSL |
LT-5 tm fast-acting fuse. Short lead (bulk) 100 pieces. Ampere rating .400, voltage rating 250, Nominal resistance cold ohms 180. |
Littelfuse |
| 3 |
0662.400ZRLL |
LT-5 tm fast-acting fuse. Long lead (tape and reel) 750 pieces. Ampere rating .400, voltage rating 250, nominal resistance cold ohms 180. |
Littelfuse |
| 4 |
AD9851BRS |
CMOS 180 MHz DDS/DAC Synthesizer |
Analog Devices |
| 5 |
AWS5508 |
SP4T PHEMT Transmit/Receive Antenna Switch GSM 900 MHz/DCS 1800 MHz/PCS 1900 MHz |
Anadigics Inc |
| 6 |
AWS5508S19 |
SP4T PHEMT Transmit/Receive Antenna Switch GSM 900 MHz/DCS 1800 MHz/PCS 1900 MHz |
Anadigics Inc |
| 7 |
MF1091-1 |
FOR IF FILTER OF DCS 1800 HAND HELD |
Mitsubishi Electric Corporation |
| 8 |
MLO81100-01850 |
Surface Mount Voltage Controlled Oscillator DCS 1800 - 1900 MHz |
Tyco Electronics |
| 9 |
PE4126-00 |
High linearity MOSFET quad mixer for DCS 1800 BTS |
Peregrine Semiconductor |
| 10 |
PE4126-21 |
High linearity MOSFET quad mixer for DCS 1800 BTS |
Peregrine Semiconductor |
| 11 |
PE4126-22 |
High linearity MOSFET quad mixer for DCS 1800 BTS |
Peregrine Semiconductor |
| 12 |
PF0414 |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
Hitachi Semiconductor |
| 13 |
PF0414A |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
Hitachi Semiconductor |
| 14 |
PF0414B |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
Hitachi Semiconductor |
| 15 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 16 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 17 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 18 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 19 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 20 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 21 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 22 |
STGP18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 23 |
T158N1800 |
160 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 24 |
T198N1800 |
200 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 25 |
T200N1800 |
200 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 26 |
T250N1800 |
250 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 27 |
T320N1800 |
320 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 28 |
T350N1800 |
350 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| 29 |
T455N1800 |
455 AMPS 1800V THYRISTORS |
IPRS Baneasa |
| 30 |
T501N1800 |
500 AMPS 1800V THYRISTOR |
IPRS Baneasa |
| | | |
