| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 2 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 3 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 4 |
1SS199 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 5 |
1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 6 |
24LC09 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir |
Microchip |
| 7 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
| 8 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
| 9 |
24LC22A-I/P |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 10 |
24LC22A-I/P |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 11 |
24LC22A-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 12 |
24LC22A-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 13 |
24LC22AT-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 14 |
24LC22AT-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 15 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 16 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 17 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 18 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 19 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 20 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 21 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
| 22 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
| 23 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 24 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 25 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 26 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 27 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 28 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 29 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 30 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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