No. |
Part Name |
Description |
Manufacturer |
1 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
2 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
3 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
4 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
5 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
6 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
7 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
8 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
9 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
10 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
11 |
3DSD1280-323H |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
12 |
3DSD1280-883D-S |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
13 |
3DSD1280-PROTO |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
14 |
42S16800A |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
15 |
A43E26161 |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
16 |
A43E26161G-95 |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
17 |
A43E26161G-95F |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
18 |
A43E26161G-95U |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
19 |
A43E26161G-95UF |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
20 |
A43E26161V-95 |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
21 |
A43E26161V-95F |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
22 |
A43E26161V-95U |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
23 |
A43E26161V-95UF |
1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM |
AMIC Technology |
24 |
A43L0616A |
512K X 16 Bit X 2 Banks Synchronous DRAM |
AMIC Technology |
25 |
A43L0616AV |
512K X 16 Bit X 2 Banks Synchronous DRAM |
AMIC Technology |
26 |
A43L0616AV-5 |
512K X 16 Bit X 2 Banks Synchronous DRAM |
AMIC Technology |
27 |
A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
28 |
A43L0616AV-55 |
512K X 16 Bit X 2 Banks Synchronous DRAM |
AMIC Technology |
29 |
A43L0616AV-6 |
512K X 16 Bit X 2 Banks Synchronous DRAM |
AMIC Technology |
30 |
A43L0616AV-7 |
512K X 16 Bit X 2 Banks Synchronous DRAM |
AMIC Technology |
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