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Datasheets for S FR

Datasheets found :: 328
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No. Part Name Description Manufacturer
1 1N5154 Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz Motorola
2 1N5155 Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz Motorola
3 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
4 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
5 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
6 5Z27 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
7 5Z30 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
8 AB-124 THD+N VERSUS FREQUENCY CHARACTERISTICS AND SPECTRA OF THE PCM1717 Burr Brown
9 ACCESORIES Accesories from TUNGSRAM Handbuch der Transistoren 1971, HL-M613/A, HL-M673, EA-M131, CL-M024, CL-M031, VA-M168/A TUNGSRAM
10 AD7478 8-Bit, 1 MSPS, Low Power Successive Approximation ADC Which Operates From A Single 2.35 V to 5.25 V Power Supply Analog Devices
11 AD7478ART-500RL7 8-Bit, 1 MSPS, Low Power Successive Approximation ADC Which Operates From A Single 2.35 V to 5.25 V Power Supply Analog Devices
12 ADT6501 Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from +35°C to +115°C) Analog Devices
13 ADT6502 Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from +35°C to +115°C) Analog Devices
14 ADT6503 Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from −45°C to +15°C) Analog Devices
15 ADT6504 Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from −45°C to +15°C) Analog Devices
16 AN1011 BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST SGS Thomson Microelectronics
17 AN967 EMBEDDED APPLICATION BENEFITS FROM THE M48T559 SGS Thomson Microelectronics
18 AP9926EO Power MOSFETs from APEC provide the designer with the best combination of fast switching Advanced Power Electronics Corp.
19 ATL25 The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi Atmel
20 ATR0600 GPS Front-end IC Atmel
21 AV82C404M Dual programmable graphics frequency generator Integrated Circuit Systems
22 AV82C404N Dual programmable graphics frequency generator Integrated Circuit Systems
23 AV9161A-01CN16 Dual programmable graphics frequency generator Integrated Circuit Systems
24 AV9161A-01CW16 Dual programmable graphics frequency generator Integrated Circuit Systems
25 BAR64 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Siemens
26 BAR64-02 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
27 BAR64-02W Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
28 BAR64-04 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Siemens
29 BAR64-04W Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
30 BAR64-05 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Siemens


Datasheets found :: 328
Page: | 1 | 2 | 3 | 4 | 5 |



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