| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 2 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 3 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 4 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 5 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 6 |
5Z27 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
| 7 |
5Z30 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
| 8 |
A/D CONVERTERS |
Digital-To-Analog Converters Definitions from Raytheon Linear Integrated Circuits Databook 1989 |
Raytheon |
| 9 |
AB-124 |
THD+N VERSUS FREQUENCY CHARACTERISTICS AND SPECTRA OF THE PCM1717 |
Burr Brown |
| 10 |
ABBREVIATIONS |
Explanation of abbreviations used for TESLA germanium transistors from Germaniovych tranzistoru konstrukcni katalog 1971 |
Tesla Elektronicke |
| 11 |
ACCESORIES |
Accesories from TUNGSRAM Handbuch der Transistoren 1971, HL-M613/A, HL-M673, EA-M131, CL-M024, CL-M031, VA-M168/A |
TUNGSRAM |
| 12 |
AD7478 |
8-Bit, 1 MSPS, Low Power Successive Approximation ADC Which Operates From A Single 2.35 V to 5.25 V Power Supply |
Analog Devices |
| 13 |
AD7478ART-500RL7 |
8-Bit, 1 MSPS, Low Power Successive Approximation ADC Which Operates From A Single 2.35 V to 5.25 V Power Supply |
Analog Devices |
| 14 |
ADT6501 |
Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from +35°C to +115°C) |
Analog Devices |
| 15 |
ADT6502 |
Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from +35°C to +115°C) |
Analog Devices |
| 16 |
ADT6503 |
Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from −45°C to +15°C) |
Analog Devices |
| 17 |
ADT6504 |
Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from −45°C to +15°C) |
Analog Devices |
| 18 |
AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST |
SGS Thomson Microelectronics |
| 19 |
AN967 |
EMBEDDED APPLICATION BENEFITS FROM THE M48T559 |
SGS Thomson Microelectronics |
| 20 |
AP9926EO |
Power MOSFETs from APEC provide the designer with the best combination of fast switching |
Advanced Power Electronics Corp. |
| 21 |
APPLICATION NOTES |
Application Notes from TRW Data Book 1991 |
TRW |
| 22 |
ATL25 |
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi |
Atmel |
| 23 |
ATR0600 |
GPS Front-end IC |
Atmel |
| 24 |
AV82C404M |
Dual programmable graphics frequency generator |
Integrated Circuit Systems |
| 25 |
AV82C404N |
Dual programmable graphics frequency generator |
Integrated Circuit Systems |
| 26 |
AV9161A-01CN16 |
Dual programmable graphics frequency generator |
Integrated Circuit Systems |
| 27 |
AV9161A-01CW16 |
Dual programmable graphics frequency generator |
Integrated Circuit Systems |
| 28 |
BAR64 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 29 |
BAR64-02 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 30 |
BAR64-02W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| | | |
