| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6264 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 2 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3 |
1N6265 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 4 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 5 |
1N6266 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 6 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 7 |
4N25 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 8 |
4N26 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 9 |
4N27 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 10 |
4N28 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 11 |
ADR3410 |
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ... |
Anadigics Inc |
| 12 |
CQX14 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 13 |
CQX14 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 14 |
CQX15 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 15 |
CQX15 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 16 |
CQX16 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 17 |
CQX16 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 18 |
CQX17 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 19 |
CQX17 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 20 |
CQX48 |
GaAs Infrared Emitting Diode in Side View Package |
Vishay |
| 21 |
CQY11B |
GaAs infrared LED |
mble |
| 22 |
CQY36N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
| 23 |
CQY37N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
| 24 |
DIE PROCESS |
Die Process Information |
Siliconix |
| 25 |
DIODES INFORMATIONS |
Diodes informations from Einzelhalbleiter Industrie-Typen Datenbuch 1976-1977 |
Siemens |
| 26 |
DIODES INFORMATIONS |
Diodes informations from Einzelhalbleiter Industrie-Typen Datenbuch 1976-1977 |
Siemens |
| 27 |
DTA115T |
Digital Transistors (BRT) R1 is 100 kOhms, R2 is inf kOhms |
ON Semiconductor |
| 28 |
F0118G |
GaAs Infrared Emitting Diode |
OSRAM |
| 29 |
F0118J |
GaAs Infrared Emitting Diode |
OSRAM |
| 30 |
F5D1 |
AlGaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| | | |
