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Datasheets for S X

Datasheets found :: 4924
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No. Part Name Description Manufacturer
1 2722 161 01211 Waveguide isolators X-BAND 8500 to 9600 MHz Philips
2 2722 161 01221 Waveguide isolators X-BAND 8500 to 9600 MHz Philips
3 2722 161 01222 Waveguide isolators X-BAND 8500 to 9600 MHz Philips
4 2722 161 01261 Waveguide isolators X-BAND 8500 to 9600 MHz Philips
5 2722 161 01361 Waveguide isolators X-BAND 8500 to 9600 MHz Philips
6 2722 161 01531 Waveguide isolators X-BAND 10025 to 10325 MHz Philips
7 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
8 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
9 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
10 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
11 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
12 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
13 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
14 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
15 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
16 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
17 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
18 54S416T 1M x 4 Banks x 16 BITS SDRAM Ceramate
19 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
20 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
21 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
22 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
23 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
24 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
25 5962-9052801M3A TAXIchip Integrated Circuits(Transparent Asynchronous Xmitter-Receiver Interface) Advanced Micro Devices
26 5962-9052801MXA TAXIchip Integrated Circuits(Transparent Asynchronous Xmitter-Receiver Interface) Advanced Micro Devices
27 74AVCBH164245GRE4 16-Bit Dual-Supply Bus Xcvr w/ Config. Voltage Xlation and 3-State Outputs 48-TSSOP -40 to 85 Texas Instruments
28 74AVCBH164245GRG4 16-Bit Dual-Supply Bus Xcvr w/ Config. Voltage Xlation and 3-State Outputs 48-TSSOP -40 to 85 Texas Instruments
29 74AVCBH164245ZQLR 16-Bit Dual-Supply Bus Xcvr w/ Config. Voltage Xlation and 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 Texas Instruments
30 AC1602A AC1602A (16 CHARACTERS x2 LINES) Unknow


Datasheets found :: 4924
Page: | 1 | 2 | 3 | 4 | 5 |



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