DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for S11

Datasheets found :: 2201
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 05WS11 05W 05WS SERIES ZENER DIODES Leshan Radio Company
2 101S11AX0 Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max ITT Semiconductors
3 101S11AX1 Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max ITT Semiconductors
4 102S11AX0 Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max ITT Semiconductors
5 102S11AX1 Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max ITT Semiconductors
6 103S11AX0 Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max ITT Semiconductors
7 103S11AX1 Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max ITT Semiconductors
8 104S11AX0 Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max ITT Semiconductors
9 104S11AX1 Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max ITT Semiconductors
10 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch Hitachi Semiconductor
11 1SS110 35 V, band switching diode Leshan Radio Company
12 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching Hitachi Semiconductor
13 1SS119 Small Signal Hitachi Semiconductor
14 1SS119 Diodes>Switching Renesas
15 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
16 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
17 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
18 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
19 54LS11 Triple 3-Input AND gate Fairchild Semiconductor
20 54LS11 Triple 3-Input AND gates IPRS Baneasa
21 54LS11 Triple 3-Input AND Gates IPRS Baneasa
22 54LS11 Triple 3-Input AND Gate National Semiconductor
23 54LS112 Dual JK Negative Edge-Triggered Flip-Flop Fairchild Semiconductor
24 54LS112 Dual Negative-Edge-Triggered Master-Slave J-K Flip-Flop with Preset, Clear and Complementary OP National Semiconductor
25 54LS112DMQB 7 V, dual negative-edge-triggered master-slave J-K flip-flop with preset, clear and complementary output National Semiconductor
26 54LS112FMQB 7 V, dual negative-edge-triggered master-slave J-K flip-flop with preset, clear and complementary output National Semiconductor
27 54LS112LMQB 7 V, dual negative-edge-triggered master-slave J-K flip-flop with preset, clear and complementary output National Semiconductor
28 54LS113 Dual JK Edge-Triggered Flip-Flop Fairchild Semiconductor
29 54LS113 Dual JK Edge Triggered Flip-Flop National Semiconductor
30 54LS113DMQB Dual JK Edge-Triggered Flip-Flop National Semiconductor


Datasheets found :: 2201
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com