No. |
Part Name |
Description |
Manufacturer |
1 |
1S287 |
10 Watt reference diode |
TOSHIBA |
2 |
1S287 |
Zener diode |
TOSHIBA |
3 |
1S287 |
Silicon junction zener diode 10W 45V |
TOSHIBA |
4 |
DM54S287AJ |
40 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
5 |
DM54S287J |
60 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
6 |
DM74S287AJ |
30 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
7 |
DM74S287AN |
30 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
8 |
DM74S287AV |
30 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
9 |
DM74S287J |
50 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
10 |
DM74S287N |
50 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
11 |
DM74S287V |
50 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
12 |
HS2870 |
5 V, +/-100 ppm, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
13 |
HS2871 |
5 V, +/-50 ppm, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
14 |
HS2877 |
5 V, +/-25 ppm, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
15 |
HS2879 |
5 V, customer specific, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
16 |
HS287A |
5 V, +/-20 ppm, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
17 |
HS287B |
5 V, +/-50 ppm, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
18 |
HS287C |
5 V, +/-100 ppm, differential positive ECL crystal clock oscillator |
NEL Frequency Controls |
19 |
MH74S287 |
Bipolar PROM 256 x 4 |
Tesla Elektronicke |
20 |
MH74S287 |
Entering the contents of the PROM memory |
Tesla Elektronicke |
21 |
MH74S287 |
Programmable memory PROM 256 bits |
Tesla Elektronicke |
22 |
NX8567SAS287-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1528.733 nm. Frequency 196.10 THz. FC-UPC connector. |
NEC |
23 |
NX8567SAS287-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1528.773 nm. Frequency 196.10 THz. SC-UPC connector. |
NEC |
24 |
Q62702-S287 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
Siemens |
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