| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 3 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 5 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 6 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 8 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 10 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 11 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 12 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 13 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 14 |
1SS312 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 15 |
1SS313 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 16 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 17 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 18 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 19 |
26LS31 |
QUAD EIA.422 LINE DRIVER WITH THREE.STATE OUTPUTS |
Motorola |
| 20 |
26LS31 |
QuadHighSpeedDifferentialLineDriver |
National Semiconductor |
| 21 |
26LS31 |
QUADRUPLEDIFFERENTIALLINEDRIVER |
Texas Instruments |
| 22 |
54LS31 |
DELAY ELEMENTS |
Texas Instruments |
| 23 |
74LS31 |
DELAY ELEMENTS |
Texas Instruments |
| 24 |
AM26LS31 |
QUAD EIA.422 LINE DRIVER WITH THREE.STATE OUTPUTS |
Motorola |
| 25 |
AM26LS31 |
Quadruple Differential Line Driver |
Texas Instruments |
| 26 |
AM26LS31C |
QUADRUPLE DIFFERENTIAL LINE DRIVER |
Texas Instruments |
| 27 |
AM26LS31CD |
Quadruple Differential Line Driver |
Texas Instruments |
| 28 |
AM26LS31CDBR |
Quadruple Differential Line Driver |
Texas Instruments |
| 29 |
AM26LS31CDBRE4 |
Quadruple Differential Line Driver 16-SSOP 0 to 70 |
Texas Instruments |
| 30 |
AM26LS31CDE4 |
Quadruple Differential Line Driver 16-SOIC 0 to 70 |
Texas Instruments |
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