| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2 |
1S3100 |
1W Zener diode 100V |
Texas Instruments |
| 3 |
1S3100A |
1W Zener diode 100V, ±5% tolerance |
Texas Instruments |
| 4 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 5 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 6 |
1S3110 |
1W Zener diode 110V |
Texas Instruments |
| 7 |
1S3110A |
1W Zener diode 110V, ±5% tolerance |
Texas Instruments |
| 8 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 10 |
1S3120 |
1W Zener diode 120V |
Texas Instruments |
| 11 |
1S3120A |
1W Zener diode 120V, ±5% tolerance |
Texas Instruments |
| 12 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 13 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14 |
1S3130 |
1W Zener diode 130V |
Texas Instruments |
| 15 |
1S3130A |
1W Zener diode 130V, ±5% tolerance |
Texas Instruments |
| 16 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 17 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 18 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 19 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 20 |
1S3150 |
1W Zener diode 150V |
Texas Instruments |
| 21 |
1S3150A |
1W Zener diode 150V, ±5% tolerance |
Texas Instruments |
| 22 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 23 |
1S3160 |
1W Zener diode 160V |
Texas Instruments |
| 24 |
1S3160A |
1W Zener diode 160V, ±5% tolerance |
Texas Instruments |
| 25 |
1S3180 |
1W Zener diode 180V |
Texas Instruments |
| 26 |
1S3180A |
1W Zener diode 180V, ±5% tolerance |
Texas Instruments |
| 27 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 28 |
1SS312 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 29 |
1SS313 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 30 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
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