No. |
Part Name |
Description |
Manufacturer |
1 |
AUIRLS4030 |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
2 |
AUIRLS4030-7P |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package |
International Rectifier |
3 |
AUIRLS4030-7TRR |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package |
International Rectifier |
4 |
AUIRLS4030TRL |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
5 |
AUIRLS4030TRR |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
6 |
IRLS4030 |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
7 |
IRLS4030-7P |
100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package |
International Rectifier |
8 |
IRLS4030TRL7PP |
100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package |
International Rectifier |
9 |
IRLS4030TRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
10 |
KM416S4030C |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
11 |
KM416S4030CT-F10 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
12 |
KM416S4030CT-F7 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
13 |
KM416S4030CT-F8 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
14 |
KM416S4030CT-FH |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
15 |
KM416S4030CT-FL |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
16 |
KM416S4030CT-G |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
17 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
18 |
KM416S4030CT-G8 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
19 |
KM416S4030CT-GH |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
20 |
KM416S4030CT-GL |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
21 |
KM416S4030CT-L10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
22 |
NSS40300D |
Low VCE(sat) Transistor, Dual PNP, 40 V, 6.0 A |
ON Semiconductor |
23 |
NSS40300MD |
Low VCE(sat) Transistor, Dual PNP, 40 V, 6.0 A |
ON Semiconductor |
24 |
NSS40300MZ4 |
Low VCE(sat) Transistor, PNP, 40 V, 3.0 A |
ON Semiconductor |
25 |
NSS40301MD |
Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A |
ON Semiconductor |
26 |
NSS40301MZ4 |
NPN Bipolar Power Transistor 40V, 3A, Low VCE(sat) |
ON Semiconductor |
27 |
NSS40302P |
Low VCE(sat) Transistor, Complementary, 40 V, 6.0 A |
ON Semiconductor |
28 |
STPS4030C |
LOW DROP POWER SCHOTTKY RECTIFIER |
ST Microelectronics |
29 |
STPS4030CG |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
30 |
STPS4030CG |
LOW DROP POWER SCHOTTKY RECTIFIER |
ST Microelectronics |
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