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Datasheets for S4030

Datasheets found :: 47
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 AUIRLS4030 Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package International Rectifier
2 AUIRLS4030-7P Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package International Rectifier
3 AUIRLS4030-7TRR Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package International Rectifier
4 AUIRLS4030TRL Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package International Rectifier
5 AUIRLS4030TRR Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package International Rectifier
6 IRLS4030 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
7 IRLS4030-7P 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package International Rectifier
8 IRLS4030TRL7PP 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package International Rectifier
9 IRLS4030TRLPBF 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
10 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
11 KM416S4030CT-F10 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
12 KM416S4030CT-F7 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
13 KM416S4030CT-F8 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
14 KM416S4030CT-FH 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
15 KM416S4030CT-FL 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
16 KM416S4030CT-G 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
17 KM416S4030CT-G7 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Samsung Electronic
18 KM416S4030CT-G8 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Samsung Electronic
19 KM416S4030CT-GH 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
20 KM416S4030CT-GL 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
21 KM416S4030CT-L10 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
22 NSS40300D Low VCE(sat) Transistor, Dual PNP, 40 V, 6.0 A ON Semiconductor
23 NSS40300MD Low VCE(sat) Transistor, Dual PNP, 40 V, 6.0 A ON Semiconductor
24 NSS40300MZ4 Low VCE(sat) Transistor, PNP, 40 V, 3.0 A ON Semiconductor
25 NSS40301MD Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A ON Semiconductor
26 NSS40301MZ4 NPN Bipolar Power Transistor 40V, 3A, Low VCE(sat) ON Semiconductor
27 NSS40302P Low VCE(sat) Transistor, Complementary, 40 V, 6.0 A ON Semiconductor
28 STPS4030C LOW DROP POWER SCHOTTKY RECTIFIER ST Microelectronics
29 STPS4030CG LOW DROP POWER SCHOTTKY RECTIFIER SGS Thomson Microelectronics
30 STPS4030CG LOW DROP POWER SCHOTTKY RECTIFIER ST Microelectronics


Datasheets found :: 47
Page: | 1 | 2 |



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