| No. |
Part Name |
Description |
Manufacturer |
| 1 |
150KS40A |
STANDARD RECOVERY DIODES Stud Version |
International Rectifier |
| 2 |
AT94S40AL |
The Secure FPSLIC combines our AT94K40AL FPSLIC device and a secure configuration EEPROM in a single (256 BGA and 144 LQ) package. |
Atmel |
| 3 |
AT94S40AL-25BQC |
Secure 5K - 40K Gates of AT40K FPGA with 8-bit Microcontroller/ up to 36 Kbytes of SRAM and On-chip Program Storage EEPROM |
Atmel |
| 4 |
AT94S40AL-25BQI |
Secure 5K - 40K Gates of AT40K FPGA with 8-bit Microcontroller/ up to 36 Kbytes of SRAM and On-chip Program Storage EEPROM |
Atmel |
| 5 |
AT94S40AL-25DGC |
Secure 5K - 40K Gates of AT40K FPGA with 8-bit Microcontroller/ up to 36 Kbytes of SRAM and On-chip Program Storage EEPROM |
Atmel |
| 6 |
AT94S40AL-25DGI |
Secure 5K - 40K Gates of AT40K FPGA with 8-bit Microcontroller/ up to 36 Kbytes of SRAM and On-chip Program Storage EEPROM |
Atmel |
| 7 |
BAS40A |
Schottky Diode |
Rectron Semiconductor |
| 8 |
BFS40A |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 9 |
LT1S40A |
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
| 10 |
M2V28S40ATP |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 11 |
M2V28S40ATP-6 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 12 |
M2V28S40ATP-6L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 13 |
M2V28S40ATP-7 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 14 |
M2V28S40ATP-7L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 15 |
M2V28S40ATP-8 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 16 |
M2V28S40ATP-8L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 17 |
M2V56S40AKT |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 18 |
M2V56S40AKT-5 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 19 |
M2V56S40AKT-6 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 20 |
M2V56S40AKT-7 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 21 |
M2V56S40ATP |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 22 |
M2V56S40ATP-5 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 23 |
M2V56S40ATP-6 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 24 |
M2V56S40ATP-7 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 25 |
M5M4V64S40ATP-10 |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
| 26 |
M5M4V64S40ATP-10L |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
| 27 |
M5M4V64S40ATP-8 |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
| 28 |
M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
| 29 |
M5M4V64S40ATP-8L |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
| 30 |
MS40A |
40 Lead Molded Shrink Small Outline Package, EIAJ, Type III |
National Semiconductor |
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