| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S410 |
Diffused silicon rectifier 3A 100V |
Texas Instruments |
| 2 |
1S410R |
Diffused silicon rectifier 3A 100V, reverse polarity |
Texas Instruments |
| 3 |
1S411 |
Diffused silicon rectifier 3A 200V |
Texas Instruments |
| 4 |
1S411R |
Diffused silicon rectifier 3A 200V, reverse polarity |
Texas Instruments |
| 5 |
1S413 |
Diffused silicon rectifier 3A 400V |
Texas Instruments |
| 6 |
1S413R |
Diffused silicon rectifier 3A 400V, reverse polarity |
Texas Instruments |
| 7 |
1S415 |
Diffused silicon rectifier 3A 600V |
Texas Instruments |
| 8 |
1S415R |
Diffused silicon rectifier 3A 600V, reverse polarity |
Texas Instruments |
| 9 |
1S417 |
Diffused silicon rectifier 3A 800V |
Texas Instruments |
| 10 |
1S417R |
Diffused silicon rectifier 3A 800V, reverse polarity |
Texas Instruments |
| 11 |
1S419 |
Diffused silicon rectifier 3A 1000V |
Texas Instruments |
| 12 |
1S419R |
Diffused silicon rectifier 3A 1000V, reverse polarity |
Texas Instruments |
| 13 |
1SS412 |
Switching diode |
TOSHIBA |
| 14 |
1SS413 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 15 |
1SS413CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 16 |
1SS416 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 17 |
1SS416CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 18 |
1SS417 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 19 |
1SS417CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 20 |
1SS418 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 21 |
1SS419 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 22 |
24LCS41A-I/P |
|
Microchip |
| 23 |
24LCS41A/P |
|
Microchip |
| 24 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
| 25 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 26 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 27 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 28 |
82S41 |
Quad Exclusive-OR element |
Signetics |
| 29 |
93S41 |
4-BIT arithmetic logic unit |
Fairchild Semiconductor |
| 30 |
ACS4110 |
Optical modem IC |
Semtech |
| | | |
