| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DM54S473AJ |
60 ns, (512 x 8) 4096-bit TTL PROM |
National Semiconductor |
| 2 |
DM54S473J |
75 ns, (512 x 8) 4096-bit TTL PROM |
National Semiconductor |
| 3 |
DM74S473 |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 4 |
DM74S473AJ |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 5 |
DM74S473AN |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 6 |
DM74S473AV |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 7 |
DM74S473J |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 8 |
DM74S473N |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 9 |
DM74S473V |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 10 |
DM74S473V |
(512 x 8) 4096-Bit TTL PROM |
National Semiconductor |
| 11 |
ERG1FGS473D |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 12 |
ERG1FJS473D |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 13 |
ERG1FJS473E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 14 |
ERG1SJS473H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 15 |
ERG2FGS473E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 16 |
ERG2FJS473D |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 17 |
ERG2FJS473E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 18 |
ERG2SJS473H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 19 |
ERG3FJS473E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 20 |
ERG3SJS473H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 21 |
ERG5SJS473H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 22 |
HCS473 |
The HCS473 combines the patented KEELOQ® code hopping technology and bi-directional transponder challenge-and-response security into a single chip solution for logical and physical access control. High security learning mechanisms mak |
Microchip |
| 23 |
HCS473 |
The HCS473 combines the patented KEELOQ® code hopping technology and bi-directional transponder challenge-and-response security into a single chip solution for logical and physical access control. High security learning mechanisms mak |
Microchip |
| 24 |
NX8567SAS473-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1547.316 nm. Frequency 193.75 THz. FC-UPC connector. |
NEC |
| 25 |
NX8567SAS473-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1547.316 nm. Frequency 193.75 THz. SC-UPC connector. |
NEC |
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