| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADS8201 |
2.2V to 5.5V, Low-Power, 12-Bit, 100kSPS, 8-Channel DAS with PGA and SPI� |
Texas Instruments |
| 2 |
ADS8201IBRGER |
2.2V to 5.5V, Low-Power, 12-Bit, 100kSPS, 8-Channel DAS with PGA and SPI? 24-VQFN -40 to 85 |
Texas Instruments |
| 3 |
ADS8201IBRGET |
2.2V to 5.5V, Low-Power, 12-Bit, 100kSPS, 8-Channel DAS with PGA and SPI? 24-VQFN -40 to 85 |
Texas Instruments |
| 4 |
ADS8201IRGER |
2.2V to 5.5V, Low-Power, 12-Bit, 100kSPS, 8-Channel DAS with PGA and SPI? 24-VQFN -40 to 85 |
Texas Instruments |
| 5 |
ADS8201IRGET |
2.2V to 5.5V, Low-Power, 12-Bit, 100kSPS, 8-Channel DAS with PGA and SPI? 24-VQFN -40 to 85 |
Texas Instruments |
| 6 |
AS8201 |
TTP/C-C1 Communications Controller |
Austria Mikro Systems |
| 7 |
HTMS8201FTB |
HITAG µ (ISO14223) and (ISO11784/85) Transponder IC |
NXP Semiconductors |
| 8 |
HTMS8201FTK |
HITAG µ (ISO14223) and (ISO11784/85) Transponder IC |
NXP Semiconductors |
| 9 |
HTMS8201FUG |
HITAG µ (ISO14223) and (ISO11784/85) Transponder IC |
NXP Semiconductors |
| 10 |
S8201 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 11 |
S8201 |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
| 12 |
TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs |
TOSHIBA |
| | | |
