| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1220 |
PNP Silicon Power Transistor |
NEC |
| 2 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 3 |
2SA1220 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 4 |
2SA1220 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 5 |
2SA1220A |
PNP Silicon Power Transistor |
NEC |
| 6 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 7 |
2SA1220A |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 8 |
2SA1220A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 9 |
CSA1220 |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSC2690 |
Continental Device India Limited |
| 10 |
CSA1220A |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 2.500A Ic, 60 - 320 hFE. Complementary CSC2690A |
Continental Device India Limited |
| 11 |
CSA1220AO |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690AO |
Continental Device India Limited |
| 12 |
CSA1220AR |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690AR |
Continental Device India Limited |
| 13 |
CSA1220AY |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690AY |
Continental Device India Limited |
| 14 |
CSA1220O |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690O |
Continental Device India Limited |
| 15 |
CSA1220R |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690R |
Continental Device India Limited |
| 16 |
CSA1220Y |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690Y |
Continental Device India Limited |
| 17 |
CSC2690 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220 |
Continental Device India Limited |
| 18 |
CSC2690A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220A |
Continental Device India Limited |
| 19 |
CSC2690AO |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSA1220AO |
Continental Device India Limited |
| 20 |
CSC2690AR |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSA1220AR |
Continental Device India Limited |
| 21 |
CSC2690AY |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSA1220AY |
Continental Device India Limited |
| 22 |
CSC2690O |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSA1220O |
Continental Device India Limited |
| 23 |
CSC2690R |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSA1220R |
Continental Device India Limited |
| 24 |
CSC2690Y |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSA1220Y |
Continental Device India Limited |
| 25 |
KSA1220 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 26 |
KSA1220 |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 27 |
KSA1220A |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 28 |
KSA1220A |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 29 |
KSA1220AOS |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 30 |
KSA1220AYS |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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