| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1620 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 2 |
2SA1621 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 3 |
2SA1624 |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
SANYO |
| 4 |
2SA1625 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 5 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 6 |
2SA1625-T |
Silicon transistor |
NEC |
| 7 |
2SA1625-T/JD |
Silicon transistor |
NEC |
| 8 |
2SA1625-T/JM |
Silicon transistor |
NEC |
| 9 |
2SA1625/JD |
Silicon transistor |
NEC |
| 10 |
2SA1625/JM |
Silicon transistor |
NEC |
| 11 |
2SA1626 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 12 |
2SA1627 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 13 |
KSA1625 |
PNP Silicon Transistor |
Fairchild Semiconductor |
| 14 |
KSA1625KBU |
PNP Silicon Transistor |
Fairchild Semiconductor |
| 15 |
KSA1625KTA |
PNP Silicon Transistor |
Fairchild Semiconductor |
| 16 |
SA1620 |
Low voltage GSM front-end transceiver |
Philips |
| 17 |
SA1620BE |
Low voltage GSM front-end transceiver |
Philips |
| | | |
