| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 2 |
NX8567SA350-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1535.036 nm. Frequency 195.30 THz. FC-UPC connector. |
NEC |
| 3 |
NX8567SA350-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1535.036 nm. Frequency 195.30 THz. SC-UPC connector. |
NEC |
| | | |
