No. |
Part Name |
Description |
Manufacturer |
1 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
2 |
NX8567SA354-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1535.429 nm. Frequency 195.25 THz. FC-UPC connector. |
NEC |
3 |
NX8567SA354-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1535.429 nm. Frequency 195.25 THz. SC-UPC connector. |
NEC |
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