| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA53 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 2 |
2SA53 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 3 |
2SA53 |
Germanium PNP alloy junction transistor |
TOSHIBA |
| 4 |
2SA532 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 5 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 6 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 7 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 8 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 9 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 10 |
CSA537B |
0.750W General Purpose PNP Metal Can Transistor. 50V Vceo, 0.700A Ic, 50 - 100 hFE. |
Continental Device India Limited |
| 11 |
CSA539 |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 40 - 240 hFE |
Continental Device India Limited |
| 12 |
CSA539O |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 70 - 140 hFE |
Continental Device India Limited |
| 13 |
CSA539R |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 40 - 80 hFE |
Continental Device India Limited |
| 14 |
CSA539Y |
W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 120 - 240 hFE |
Continental Device India Limited |
| 15 |
DSA535SA |
SMD Type (VC-) TCXO |
etc |
| 16 |
KSA539 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 17 |
KSA539 |
PNP Epitaxial Silicon low frequency Transistor |
Samsung Electronic |
| 18 |
KSA539CYBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 19 |
KSA539CYTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 20 |
KSA539OTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 21 |
KSA539YBU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 22 |
KSA539YTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 23 |
MSA5360C |
0.5 INCH (12.7MM) 16 SEGMENT, SINGLE DIGIT ALPHA - NUMERIC STICK DISPLAY |
Fairchild Semiconductor |
| 24 |
MSA5380C |
0.5 INCH (12.7MM) 16 SEGMENT, SINGLE DIGIT ALPHA - NUMERIC STICK DISPLAY |
Fairchild Semiconductor |
| 25 |
NX8567SA533-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1553.329nm. Frequency 193.00 THz. FC-UPC connector. |
NEC |
| 26 |
NX8567SA533-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. SC-UPC connector. |
NEC |
| 27 |
NX8567SA537-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1553.731nm. Frequency 192.95 THz. FC-UPC connector. |
NEC |
| 28 |
NX8567SA537-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1553.731 nm. Frequency 192.95 THz. SC-UPC connector. |
NEC |
| 29 |
SA5311 |
LED Lamp |
AUK Corp |
| 30 |
SA5311(B) |
LED Lamp |
AUK Corp |
| | | |
